Model | - SUSS MicroTec Lithography GmbH , 2016 - model MASK ALIGNER MA6 |
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Operating time | 09:00 ~ 18:00 |
Location | IBS HQ (C171 Photo-lithography room) |
inquiry |
1. Equipment name : Dual Mask Aligner (양면 정렬 마이크로패턴 노광장비)
2. Manufacture and Model
- SUSS MicroTec Lithography GmbH , 2016
- model MASK ALIGNER MA6
3. Purpose : This equipment is used to development for low temperature detectors. It is a semi-automated mask aligner for both side alignment for wafers.
4. Specification and performance :
It should guarantee the alignment accuracy of 0.5 um for top-side and 1 um for bottom-side. Flexible beam shaping adjustment has be available by using different illumination filter plates.
1. Wafer/Substrate Size : Silicon wafer and transparent substrate of 3" and above
2. Mask size : 5" × 5", 6" × 6"
3. Exposure optics
- UV light source 350 ~ 450 ㎚, UV-Lamp power ≥350 W
- Light uniformity: ≤2.0%
4. Exposure System
- For steep wall slopes, high resolution, high aspect ratio structure, thick PR
- Exposure gap : 1~999 ㎛ / 1 um steps
5. Printing Resolution
- Vacuum contact : 0.7 ㎛
- Hard / Soft contact : 1.0 /2.0 ㎛
- Proximity (20 ㎛) : 2.5 ~ 3.0 ㎛
6. Alignment
- Methods : Top Side Alignment (TSA) microscope
: Bottom Side Alignment (BSA) microscope
- Accuracy: TSA ± 0.5 ㎛ / BSA ± 1.0 ㎛
- Alignment gap : 1 ~ 999 ㎛ / 1 um steps
7. Alignment stage
- Alignment range in X : ≥ ±10 ㎜
- Alignment range in Y : ≥ ±5 ㎜
- Alignment range in θ : ≥ ±5°
- Mechanical resolution in X, Y : 0.1 ㎛
8. Microscope illumination
9. Microscope stage(TSA/BSA)
Top side alignment
- Movement range in X : ± 40 ㎜
- Movement range in Y : +30 ㎜ / -50 ㎜
- Rotation range : ≥±4°
Bottom side alignment
- Movement range in X : 15 mm to 100 mm
- Movement range in Y : +50 mm / -20 mm
10. Topside microscope (split-field)
- Eyepieces : two 10X
- Objectives : two 5X, two 10X with turret
11. Programming
- Exposure modes : Proximity, Soft contact, Hard contact, Vacuum contact , Soft vacuum contact
- Exposure time : 0 ~ 999.9 sec, 0.1 sec steps
- Resist type : Positive, Negative
- Alignment side : Top side alignment
12. Lamp power supply unit
- Constant intensity mode for 365 ㎚, 405 ㎚ : To compensate intensity lost due to lamp aging
- Constant power Mode
- Digital read out of light intensity and power
13. Lamp adapter
14. Light intensity meter
- For measurement, check and calibration of light uniformity in the exposure area
- Dose measurement functionality
- Measurement for 365 nm and broadband(i-, g-, h-line)
15. Internal UV light sensors
- For lamp power supply
- For light intensity meter (365 nm/405 nm)
16. Wedge Error Compensation System
: Leveling of substrate to mask
17. UV Lamp ( ≥350 W)
18. Vacuum Pump
19. Vibration isolation damping system
20. Expandable design for following features
- Nano Imprinting Lithography
- Buried layers feature alignment using Infrared light kits
- Mask Protection Technology(MPT) to reduce the frequency of mask cleaning
5. Location and Picture :
- IBS head quarter, C171 Photo-lithography room