Suyong Jung
March 24(Fri) - March 24(Fri), 2017
Probing Electronic Properties of Two-Dimensional Materials
with Planar Tunnel Junctions
Suyong Jung
Korea Research Institute of Standards and Science
Two-dimensional van der Waals heterostructures utilizing thin hexagonal boron nitride (h-BN) as a tunneling insulator have been proven as interesting experimental platforms for investigating electronic structures of low-dimensional systems. Here we present electron tunneling spectroscopy measurements on various two-dimensional electronic systems comprised of graphene, h-BN, and transition metal dichalcogenides. With much improved tunnel junction stability of thin h-BN insulator, we can probe the electronic structures of two-dimensional systems such as Landau levels in graphene, energy gaps in bilayer graphene, secondary minibands formed in graphene superlattice and superconductivity in NbSe2 with much improved signal-to-noise ratio by varying charge density, tunneling bias voltage and external magnetic fields. We will discuss the current understanding of the observed phenomena and discuss future research plans with planar tunnel junctions.