Center for Artificial Low Dimensional Electronic Systems

Atomic resolution analysis with aberration corrected STEM/EELS for materials science and engineer

Jae Hyuck Jang

September 5(Tue) - September 5(Tue), 2017

Atomic resolution analysis with aberration corrected STEM/EELS for materials science and engineering

Jae Hyuck Jang

Korea Basic Science Institute

The transmission electron microscope (TEM) is the most powerful analysis tool for materials characterization. In this seminar, I would like to introduce the advanced analysis methods called “aberration corrected STEM (scanning transmission electron microscope) and EELS (electron

energy loss spectroscopy)”, which could observe the atomic structure of 2D materials as well as oxides with an atomic resolution. Moreover, both high angle annular dark field (HAADF) and annular bright field (ABF) image directly visualize metal atoms as well as light elements like oxygen

and carbon, even hydrogen in the real‐space image. From this the atomic structure, we can study atom positions in the materials within pm level.

In this presentation, I will introduce the latest advances in the field of STEM, and specifically show how atomic level dynamic analysis is used in 2D materials and oxides.