Center for Artificial Low Dimensional Electronic Systems

Interlayer Electron-Phonon Interaction in WSe2/hBN heterostructure

Jonghwan Kim

November 3(Thu) - November 3(Thu), 2016

Interlayer Electron-Phonon Interaction in WSe2/hBN heterostructure

Jonghwan Kim

UC Berkeley and Lawrence Berkeley National Laboratory, USA

Interlayer interaction provides fascinating opportunities in van der Waals (vdW) 2D crystals to control the electronic structure and explore novel quantum phenomena. In this talk, we report extraordinary interlayer electron-phonon coupling in WSe2/hBN heterostructure. Optically silent hBN Raman mode emerges in Raman spectrum with surprisingly strong intensity via resonant coupling to WSe2 electronic transitions. Raman excitation spectroscopy shows that double resonance nature of such enhancement and the two resonance states to be the A-exciton transition of monolayer WSe2 and a new “hybrid” state present only in WSe2/hBN heterostructures.