Center for Artificial Low Dimensional Electronic Systems

Optoelectronic devices including organic light emitting diodes and infra-red photodetector utilizing 2D TMD materials

Sangyeob Lee

July 20(Wed) - July 20(Wed), 2016

Optoelectronic devices including organic light emitting diodes and infra-red photodetector utilizing 2D TMD materials

Sangyeob Lee

Device Lab.

Samsung Advanced Institute of Technology

First, I will briefly present the application of scanning probe microscopy on the characterization of semiconductor surface structure and surface electronic properties using scanning tunneling microscopy and spectroscopy, and Kelvin probe force microscopy.

Second, I will discuss about the development of long-life time and high-efficiency organic light emitting diodes (OLEDs). OLED has been used and commercialized as a key component of flexible flat panel display. Yet, it requires to further improve the device performance to be applied to broad applications such as TV display panel and automobile display. I will present the methods to improve the device efficiency and life-time of OLED.

Last, I will introduce the researches on photodetector using MoTe2 and h-BN with three terminal graphene electrodes. We fabricated a field-effect transistor using MoTe2 channel and h-BN gate and graphene electrodes; all 2D components which showed significantly reduced dark current.