Center for Artificial Low Dimensional Electronic Systems

Electrodeless charge injection as a novel analysis methodology

Kyuwook Ihm

June 14(Tue) - June 14(Tue), 2016

Title: Electrodelesscharge injection as a novel analysis methodology

Speaker: Kyuwook Ihm (Pohang Accelerator Laboratory)

 In history technical and scientific breakthrough have been made always with emergence of a tool which enables probing a totally new territory beyond technical obstacles.

As a future non-volatile memory, resistive switching memory devices (RSMDs), such as resistive random access memory (ReRAM), phase-change random access memory (PcRAM), magnetic random access memory (MRAM), have been intensively studied as promising candidates for next-generation memory. Among them, the ReRAMdevices, which utilize the sudden phase transition between insulating and metallic phase, have been intensively investigated as the most potential alternative for the post-flash memory. The origin of resistive switching phenomena of ReRAMis known as thermochemical, redox, electrochemical and molecular changes under bias. But, the detailed mechanisms are unclear, which significantly retards the improvement of switching uniformity in ReRAMdevices. Until now all suggested working mechanism of RSMD materials have been proposed based on observations collected using indirect or destructive methods. Recently, we launched 3 years research project in August of 2015 and start to install a novel setup called “charge-carrier injection by photon and electron (CIPE)” instead of a metal electrode, which enables synchrotron based analysis without the interfering effects of the electrode.

In this seminar, I would like to show the intriguing current behavior found in this system and discuss how we can explain this. Also I’ll mention several opportunities worth to challenge, or, worth to collaborate, or worth to play with this CIPE system.