To explore new physics phenomena of low dimensional materials
with a special emphasis on two-dimensional layered structures
Model | Helios-IR 외 3 |
---|---|
Operating time |
SUN(00:00~24:00) MON(00:00~24:00) TUE(00:00~24:00) WED(00:00~24:00) THU(00:00~24:00) FRI(00:00~24:00) SAT(00:00~24:00) |
Location | 86291 |
inquiry |
Dong ki Cho 010-6788-7217 cdk0726@skku.edu |
IR transient absorption(TA) system is a powerful method to probe the electronic and structural changes of ultrashort-lived excited states of materials. It is designed to work with an regenerate amplifier femtosecond laser system.
TA technique is basically based on the pump-probe method, and spectrally- and temporally-resolved carrier dynamics can be observed.
IR TA technique can be applied to study electronic band structure of semiconductors, charge transfer process of hybrid structrue, and infrared spectroscopy.
Unit content
- Exciation wavelength : 800 nm (fixed)
- Probe spectral range : 2-13 μm
- Spectral resolution : 50 g/6000 nm-15.3 nm, 150 g/4000 nm-5.1 nm
- Temporal resolution : 14 fs (time window up to 8 ns)
- Detector : MCT detector