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To explore new physics phenomena of low dimensional materials
with a special emphasis on two-dimensional layered structures
RIE(Reactive Ion Etching) System
| Model | AFS-4RT |
|---|---|
| Operating time |
SUN(00:00~24:00) MON(00:00~24:00) TUE(00:00~24:00) WED(00:00~24:00) THU(00:00~24:00) FRI(00:00~24:00) SAT(00:00~24:00) |
| Location | 86698 |
| inquiry |
Wei Xu 010-8289-8566 |
Notice
Available Time // Always possible.
Notice // If you want to have training for using this equipment, please contact Super-user.
Current Status // Now on operation.
Reactive Ion Etching (RIE) is a simple operation, and an economical solution for general plasma etching.
Plasma is produced in the system by applying a strong RF (radio frequency) electromagnetic field to the electrode
Dimensions : 1100W*800D*``50Hmm /200kg
Bottom plasma source : CCP (capacitively coupled plasma) source type
Bottom RF generator : 13.56 MHz, 300W (Water cooling system)
Chamber : top plate open type
substrate : Max.4" wafer applicable
Vacuum module : oil rotary vacuum pump
Gas supply module : 4CH MFC 50 sccm (O2, Ar, SF6, selection)/ purge 1ch. N2
Control module : 7" LCD panel/ interlock function (CDA, coolant)
IBS Center for Integrated Nanostructure Physics , Office 86371, N Center (BIdg. 86)Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do
Copyright(c) 2014 Center for Integrated Nanostructure Physics at IBS. All Rights Reserved.
